Etching and Surface Conditioning

Plasma system for Reactive Ion Etching of a variety of materials

• Automatic load lock for 4, 6 and 8 inch wafers.
  
• ICP for high etch rates in silicon and glass.
• End Point Detection

Equipped with the following process gases:

• Argon
• CF4
• C4F8
  
• CHF3
• O2
• SF6               

Microwave Plasma system for substrate cleaning, surface activation and ashing

• Argon and oxygen microwave plasma
• 200 mm maximum sample size, for single wafer
  
• Quartz wafer boat for batch processing, up to 6 inch