Etching and Surface Conditioning

Oxford Instruments RIE 100 plasma system for reactive-ion etching (RIE) of a variety of materials:

• Automatic load lock for 4, 6 and 8 inch wafers.
  
• Inductively coupled plasma (ICP) for high etch rates in silicon and glass.
• End point detection.
• Process gases:
  • Argon
  • CF₄
  • C₄F₈
    
  • CHF₃
  • O₂
  • SF₆   

external page More information on the manufacturer's website           

TEPLA Plasma Asher Microwave system for substrate cleaning, surface activation and ashing:

• Argon and oxygen microwave plasma
• 200 mm maximum sample size for single wafer processing
  
• Quartz boat for batch processing of wafers of up to 6 inch

Diener Plasma Tetra 30 for surface conditioning:

• Microwave plasma 2.45 GHz
• LF plasma 80 kHz
• Argon, oxygen and CHF₃
• Precursors