Etching and Surface Conditioning

Oxford Instruments RIE 100 plasma system for reactive-ion etching (RIE) of a variety of materials

• Automatic load lock for 4, 6 and 8 inch wafers.
  
• Inductively coupled plasma (ICP) for high etch rates in silicon and glass.
• End point detection.

Process gases:

• Argon
• CF₄
• C₄F₈
  
• CHF₃
• O₂
• SF₆   

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Microwave plasma system for substrate cleaning, surface activation and ashing

• Argon and oxygen microwave plasma
• 200 mm maximum sample size, for single wafer
  
• Quartz wafer boat for batch processing, up to 6 inch

Plasma tool for surface conditioning

• Microwave plasma 2.45 GHz
• LF plasma 80 kHz
• Argon, Oxygen and CHF3
• Precursor